Invention Grant
US08625382B2 Block-row decoders, memory block-row decoders, memories, methods for deselecting a decoder of a memory and methods of selecting a block of memory 有权
块行解码器,存储器块行解码器,存储器,用于取消存储器解码器的方法和选择存储器块的方法

  • Patent Title: Block-row decoders, memory block-row decoders, memories, methods for deselecting a decoder of a memory and methods of selecting a block of memory
  • Patent Title (中): 块行解码器,存储器块行解码器,存储器,用于取消存储器解码器的方法和选择存储器块的方法
  • Application No.: US13168699
    Application Date: 2011-06-24
  • Publication No.: US08625382B2
    Publication Date: 2014-01-07
  • Inventor: Nicholas Hendrickson
  • Applicant: Nicholas Hendrickson
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: Dorsey & Whitney LLP
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Block-row decoders, memory block-row decoders, memories, methods for deselecting a decoder of a memory and methods of selecting a block of memory
Abstract:
Block-row decoders, memory block-row decoders, memories, methods for deselecting a decoder of a memory and methods of selecting a block of memory are disclosed. An example memory block-row decoder includes a plurality of block-row decoders, each of the block-row decoders having a decoder switch tree. Each block-row decoder is configured to bias a block select switch of the decoder switch tree with a first voltage while the block-row decoder is deselected and further configured to bias decoders switches of the decoder switch tree that are coupled to the block select switch with a second voltage while the block-row decoder is deselected, the second voltage less than the first voltage. An example method of deselecting a decoder of a memory includes providing decoder signals having different voltages to decoder switches from at least two different levels of a decoder switch tree while the decoder is deselected.
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