A non-volatile memory device includes first and second memory regions to store data and a memory control unit. Each of the first and second memory regions is configured by a plurality of physical pages. Each of the physical pages is configured by a plurality of regions corresponding to a plurality of logical addresses. The memory control unit performs control of batch erasing and batch writing on every physical page. When a first physical page in the first memory region includes a first region corresponding to a first logical address, which is a target to be written, and when a second physical page in the second memory region includes a second region corresponding to the first logical address, which is a target to be written, the memory control unit selects either the first physical page or the second physical page as a physical page for writing.