Invention Grant
- Patent Title: Semiconductor laser
- Patent Title (中): 半导体激光器
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Application No.: US13677951Application Date: 2012-11-15
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Publication No.: US08625647B2Publication Date: 2014-01-07
- Inventor: Kazuya Ohira , Nobuo Suzuki
- Applicant: Kazuya Ohira , Nobuo Suzuki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-077743 20120329
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.
Public/Granted literature
- US20130259078A1 SEMICONDUCTOR LASER Public/Granted day:2013-10-03
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