Invention Grant
- Patent Title: Phase change memory in a dual inline memory module
- Patent Title (中): 双联内存模块中的相变存储器
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Application No.: US12504029Application Date: 2009-07-16
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Publication No.: US08626997B2Publication Date: 2014-01-07
- Inventor: Shekoufeh Qawami , Jared E. Hulbert
- Applicant: Shekoufeh Qawami , Jared E. Hulbert
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00
Abstract:
Subject matter disclosed herein relates to management of a memory device.
Public/Granted literature
- US20110016268A1 PHASE CHANGE MEMORY IN A DUAL INLINE MEMORY MODULE Public/Granted day:2011-01-20
Information query
