Invention Grant
- Patent Title: Pattern correction with location effect
- Patent Title (中): 带位置效果的图案校正
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Application No.: US13447857Application Date: 2012-04-16
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Publication No.: US08627241B2Publication Date: 2014-01-07
- Inventor: Hung-Chun Wang , Ming-Hui Chih , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
- Applicant: Hung-Chun Wang , Ming-Hui Chih , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a plurality of IC regions each including an IC pattern; performing a dissection process to the IC design layout; and performing a correction process to the IC design layout using a correction model that includes proximity effect and location effect. The correction process includes performing a first correction step to a first IC region of the IC regions, resulting in a first corrected IC pattern in the first IC region; and performing a second correction step to a second IC region of the IC regions, starting with the first corrected IC pattern, resulting in a second corrected IC pattern.
Public/Granted literature
- US20130275925A1 Pattern Correction With Location Effect Public/Granted day:2013-10-17
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