Invention Grant
- Patent Title: Capacitance modification without affecting die area
- Patent Title (中): 电容修改而不影响模具面积
-
Application No.: US13593158Application Date: 2012-08-23
-
Publication No.: US08627259B2Publication Date: 2014-01-07
- Inventor: Peter Huang , Ming-Chun Chen
- Applicant: Peter Huang , Ming-Chun Chen
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Farjami & Farjami LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/20 ; H01L27/108 ; H01L29/12 ; H01L29/786 ; H01L29/94 ; H01L21/338 ; H01L21/337 ; H01L21/8242

Abstract:
According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.
Public/Granted literature
- US20120329179A1 Capacitance modification without affecting die area Public/Granted day:2012-12-27
Information query