Invention Grant
- Patent Title: Manufacturing method of a memory device to be authenticated
- Patent Title (中): 要认证的存储器件的制造方法
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Application No.: US13523485Application Date: 2012-06-14
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Publication No.: US08627455B1Publication Date: 2014-01-07
- Inventor: Yuji Nagai , Taku Kato , Tatsuyuki Matsushita
- Applicant: Yuji Nagai , Taku Kato , Tatsuyuki Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G06F21/00
- IPC: G06F21/00
Abstract:
According to one embodiment, a manufacturing method of a device to be authenticated, wherein the device includes a first memory area which is prohibited from data-reading and data-writing after shipping from a memory vendor; a second memory area which is allowed to data-read from outside after shipping from the memory vendor; and a third memory area which is allowed to data-read and data-write from outside after sipping from the memory vendor.
Public/Granted literature
- US20130339756A1 MANUFACTURING METHOD OF A MEMORY DEVICE TO BE AUTHENTICATED Public/Granted day:2013-12-19
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