Invention Grant
US08631762B2 Plasma CVD apparatus, method for manufacturing semiconductor film, method for manufacturing thin-film solar cell, and method for cleaning plasma CVD apparatus
失效
等离子体CVD装置，半导体膜的制造方法，薄膜太阳能电池的制造方法以及等离子体CVD装置的清洗方法
- Patent Title: Plasma CVD apparatus, method for manufacturing semiconductor film, method for manufacturing thin-film solar cell, and method for cleaning plasma CVD apparatus
- Patent Title (中): 等离子体CVD装置，半导体膜的制造方法，薄膜太阳能电池的制造方法以及等离子体CVD装置的清洗方法
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Application No.: US13121523Application Date: 2009-10-14
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Publication No.: US08631762B2Publication Date: 2014-01-21
- Inventor: Mikio Yamamuka , Tae Orita , Hiroya Yamarin
- Applicant: Mikio Yamamuka , Tae Orita , Hiroya Yamarin
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-277261 20081028
- International Application: PCT/JP2009/067812 WO 20091014
- International Announcement: WO2010/050363 WO 20100506
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A plasma CVD apparatus includes: a film forming chamber; a holding member that holds a substrate to be processed that is set in the film forming chamber; a shower head that is set in the film forming chamber to face the holding member, and supplies raw material gas and generates a plasma of the raw material gas; a radical generation chamber that is set at an opposite side of the shower head relative to the holding member and generates radicals of process gas; and an openable and closable shutter that is provided between the shower head and the radical generation chamber.
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