Invention Grant
- Patent Title: Manufacturing method of ferroelectric capacitor
- Patent Title (中): 铁电电容器的制造方法
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Application No.: US13412939Application Date: 2012-03-06
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Publication No.: US08633036B2Publication Date: 2014-01-21
- Inventor: Kouichi Nagai
- Applicant: Kouichi Nagai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8242 ; H01L29/76
Abstract:
Provided is a ferroelectric memory including a silicon substrate, a transistor formed on the silicon substrate, and a ferroelectric capacitor formed above the transistor. The ferroelectric capacitor includes a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film, and a metal film formed on the upper electrode.
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