Invention Grant
US08633049B2 Method of fabrication of Al/GE bonding in a wafer packaging environment and a product produced therefrom
有权
在晶片封装环境中制造Al / GE键合的方法和由其制造的产品
- Patent Title: Method of fabrication of Al/GE bonding in a wafer packaging environment and a product produced therefrom
- Patent Title (中): 在晶片封装环境中制造Al / GE键合的方法和由其制造的产品
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Application No.: US13333580Application Date: 2011-12-21
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Publication No.: US08633049B2Publication Date: 2014-01-21
- Inventor: Steven S. Nasiri , Anthony F. Flannery, Jr.
- Applicant: Steven S. Nasiri , Anthony F. Flannery, Jr.
- Applicant Address: US CA San Jose
- Assignee: Invensense, Inc.
- Current Assignee: Invensense, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Sawyer Law Group, P.C.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/00 ; H01L29/40
Abstract:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
Public/Granted literature
- US20120094435A1 METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM Public/Granted day:2012-04-19
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