Invention Grant
- Patent Title: Semiconductor device production method and semiconductor device
- Patent Title (中): 半导体装置的制造方法及半导体装置
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Application No.: US13238740Application Date: 2011-09-21
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Publication No.: US08633060B2Publication Date: 2014-01-21
- Inventor: Hirotaka Ohno
- Applicant: Hirotaka Ohno
- Applicant Address: JP Toyota-Shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-Shi
- Agency: Kenyon & Kenyon LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/34

Abstract:
A purpose of the application is to provide a semiconductor device production method capable of reducing complexity of production operations and keeping production costs low, and enhancing reliability, and a semiconductor device. One aspect of the invention provides a method of producing a semiconductor device, the method including a first bonding step of bonding a first electrode plate and a semiconductor device portion, and a second bonding step of bonding the semiconductor device portion and a second electrode plate. The method includes a sealing step of forming a sealed composite body by covering target surfaces of a composite body formed by the first bonding step with resin, the target surfaces being surfaces other than a second surface of the first electrode plate and the second surface of the semiconductor device portion. The second bonding step is performed after the sealing step.
Public/Granted literature
- US20120043662A1 SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2012-02-23
Information query
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