Invention Grant
US08633066B2 Thin film transistor with reduced edge slope angle, array substrate and having the thin film transistor and manufacturing method thereof
有权
具有降低边缘倾斜角的薄膜晶体管，阵列基板并具有薄膜晶体管及其制造方法
- Patent Title: Thin film transistor with reduced edge slope angle, array substrate and having the thin film transistor and manufacturing method thereof
- Patent Title (中): 具有降低边缘倾斜角的薄膜晶体管，阵列基板并具有薄膜晶体管及其制造方法
-
Application No.: US13270423Application Date: 2011-10-11
-
Publication No.: US08633066B2Publication Date: 2014-01-21
- Inventor: Byung Chun Lee , Tai Sung Choi , Shuibin Ni , Pil Seok Kim
- Applicant: Byung Chun Lee , Tai Sung Choi , Shuibin Ni , Pil Seok Kim
- Applicant Address: CN Beijing CN Chengdu, Sichuan Province
- Assignee: Boe Technology Group Co., Ltd.,Chengdu Boe Optoelectronics Technology Co., Ltd.
- Current Assignee: Boe Technology Group Co., Ltd.,Chengdu Boe Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing CN Chengdu, Sichuan Province
- Agency: Ladas & Parry LLP
- Priority: CN201010512054 20101012
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the source electrode and the drain electrode; edges of the active layer are aligned with outer edges of the source electrode and the drain electrode, the outer edge of the source electrode is an edge of the source electrode opposite to the drain electrode, and the outer edge of the drain electrode is an edge of the drain electrode opposite to the source electrode. Also, a method of manufacturing a thin film transistor is provided.
Public/Granted literature
- US20120086013A1 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-04-12
Information query
IPC分类:
