A method of actuating a semiconductor device includes providing a transistor including a substrate and a first electrically conductive material layer stack positioned on the substrate. The first electrically conductive material layer stack includes a reentrant profile. A second electrically conductive material layer includes first and second discrete portions in contact with first and second portions of a semiconductor material layer that conforms to the reentrant profile and is in contact with an electrically insulating material layer that conforms to the reentrant profile. A voltage is applied between the first discrete portion and the second discrete portion of the second electrically conductive material layer. A voltage is applied to the first electrically conductive material layer stack to modulate a resistance between the first discrete portion and the second discrete portion of the second electrically conductive material layer.