Method of forming semiconductor device

Invention Grant

US08633073B2 Method of forming semiconductor device 失效

Title translation: 半导体器件形成方法

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Patent Title: Method of forming semiconductor device
Patent Title (中): 半导体器件形成方法
Application No.: US13278679

Application Date: 2011-10-21
Publication No.: US08633073B2

Publication Date: 2014-01-21
Inventor: Keisuke Otsuka
Applicant: Keisuke Otsuka
Agency: Young & Thompson
Priority: JP2011-167383 20110729
Main IPC: H01L21/336
IPC: H01L21/336

Abstract:

A method of forming a semiconductor device includes the following processes. A first groove is formed in a semiconductor substrate. A first conductive film is formed in the first groove and over the semiconductor substrate. The first conductive film is planarized over the semiconductor substrate. The planarized first conductive film is selectively etched to have the planarized first conductive film remain in a lower portion of the first groove.

Abstract(Chinese):

形成半导体器件的方法包括以下处理。第一凹槽形成在半导体衬底中。第一导电膜形成在第一槽中并在半导体衬底之上。第一导电膜在半导体衬底上平坦化。选择性地蚀刻平坦化的第一导电膜以使平坦化的第一导电膜保留在第一凹槽的下部。

Public/Granted literature

US20130029467A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2013-01-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的