Invention Grant
- Patent Title: Modifying growth rate of a device layer
- Patent Title (中): 修改设备层的增长速度
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Application No.: US12980376Application Date: 2010-12-29
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Publication No.: US08633081B2Publication Date: 2014-01-21
- Inventor: Chunshan Yin , Palanivel Balasubramaniam , Jae Gon Lee , Elgin Quek
- Applicant: Chunshan Yin , Palanivel Balasubramaniam , Jae Gon Lee , Elgin Quek
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A device includes a substrate with a device region on which a transistor is formed. The device region includes active edge regions and an active center region which have different oxidation growth rates. A growth rate modifier (GRM) comprising dopants which modifies oxidation growth rate is employed to produce a gate oxide layer which has a uniform thickness. The GRM may enhance or retard the oxidation growth, depending on the type of dopants used. Fluorine dopants enhance oxidation growth rate while nitrogen dopants retard oxidation growth rate.
Public/Granted literature
- US20120168895A1 MODIFYING GROWTH RATE OF A DEVICE LAYER Public/Granted day:2012-07-05
Information query
IPC分类:
