Invention Grant
- Patent Title: Oxygen doping method to gallium nitride single crystal substrate
- Patent Title (中): 氧氮掺杂法对氮化镓单晶衬底
-
Application No.: US13032117Application Date: 2011-02-22
-
Publication No.: US08633093B2Publication Date: 2014-01-21
- Inventor: Kensaku Motoki , Masaki Ueno
- Applicant: Kensaku Motoki , Masaki Ueno
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries Ltd.
- Current Assignee: Sumitomo Electric Industries Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2001-113872 20010412
- Main IPC: H01L21/205
- IPC: H01L21/205
Abstract:
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained.
Public/Granted literature
- US20110201184A1 OXYGEN DOPING METHOD TO GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE Public/Granted day:2011-08-18
Information query
IPC分类:
