The use of a monolayer or partial monolayer sequencing process to form conductive titanium nitride produces a reliable structure for use in a variety of electronic devices. In an embodiment, a structure can be formed by using ammonia and carbon monoxide reactant materials with respect to a titanium-containing precursor exposed to a substrate. Such a TiN layer has a number of uses including, but not limited to, use as a diffusion barrier underneath another conductor or use as an electro-migration preventing layer on top of a conductor. Such deposited TiN material may have characteristics associated with a low resistivity, a smooth topology, high deposition rates, excellent step coverage, and electrical continuity.