Invention Grant
US08633373B2 Sub-micrometer gap thermophotovoltaic structure (MTPV) and fabrication method therefor
有权
亚微米间隙热光伏结构（MTPV）及其制造方法
- Patent Title: Sub-micrometer gap thermophotovoltaic structure (MTPV) and fabrication method therefor
- Patent Title (中): 亚微米间隙热光伏结构（MTPV）及其制造方法
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Application No.: US12152195Application Date: 2008-05-12
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Publication No.: US08633373B2Publication Date: 2014-01-21
- Inventor: Paul Greiff , Robert DiMatteo , Eric Brown , Christopher Leitz
- Applicant: Paul Greiff , Robert DiMatteo , Eric Brown , Christopher Leitz
- Applicant Address: US TX Austin
- Assignee: MTPV Power Corporation
- Current Assignee: MTPV Power Corporation
- Current Assignee Address: US TX Austin
- Agency: Taylor Russell & Russell, P.C.
- Main IPC: H01L31/058
- IPC: H01L31/058
Abstract:
An MTPV thermophotovoltaic chip comprising a photovoltaic cell substrate, micron/sub-micron gap-spaced from a juxtaposed heat or infrared radiation-emitting substrate, with a radiation-transparent intermediate window substrate preferably compliantly adhered to the photovoltaic cell substrate and bounding the gap space therewith.
Public/Granted literature
- US20100319749A1 Sub-micrometer gap thermophotovoltaic structure (MTPV) and fabrication method therefor Public/Granted day:2010-12-23
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