Invention Grant
US08633397B2 Method of processing cavity of core substrate 有权
核心基板空腔处理方法

Method of processing cavity of core substrate
Abstract:
A method of processing a cavity of a core substrate is disclosed. The method of processing a cavity of a core substrate in accordance with an embodiment of the present invention can include: forming a first processing area on one surface of a core substrate, the first processing area being demarcated by a circuit pattern; forming a second processing area on the other surface of the core substrate, the second processing area being demarcated by a circuit pattern; and processing a cavity by removing the entire first processing area from the one surface of the core substrate.
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