Invention Grant
- Patent Title: Method of processing cavity of core substrate
- Patent Title (中): 核心基板空腔处理方法
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Application No.: US12860301Application Date: 2010-08-20
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Publication No.: US08633397B2Publication Date: 2014-01-21
- Inventor: Jin-Soo Jeong , Doo-hwan Lee , Hwa-Sun Park , Jae-Kul Lee , Yul-Kyo Chung
- Applicant: Jin-Soo Jeong , Doo-hwan Lee , Hwa-Sun Park , Jae-Kul Lee , Yul-Kyo Chung
- Applicant Address: KR Suwon, Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2009-0078738 20090825; KR10-2009-0102504 20091027
- Main IPC: H05K1/16
- IPC: H05K1/16

Abstract:
A method of processing a cavity of a core substrate is disclosed. The method of processing a cavity of a core substrate in accordance with an embodiment of the present invention can include: forming a first processing area on one surface of a core substrate, the first processing area being demarcated by a circuit pattern; forming a second processing area on the other surface of the core substrate, the second processing area being demarcated by a circuit pattern; and processing a cavity by removing the entire first processing area from the one surface of the core substrate.
Public/Granted literature
- US20110048780A1 METHOD OF PROCESSING CAVITY OF CORE SUBSTRATE Public/Granted day:2011-03-03
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