Invention Grant
US08633471B2 Apparatus and methods for forming a modulation doped non-planar transistor
有权
用于形成调制掺杂非平面晶体管的装置和方法
- Patent Title: Apparatus and methods for forming a modulation doped non-planar transistor
- Patent Title (中): 用于形成调制掺杂非平面晶体管的装置和方法
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Application No.: US13032777Application Date: 2011-02-23
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Publication No.: US08633471B2Publication Date: 2014-01-21
- Inventor: Ravi Pillarisetty , Mantu Hudait , Marko Radosavljevic , Willy Rachmady , Gilbert Dewey , Jack Kavalieros
- Applicant: Ravi Pillarisetty , Mantu Hudait , Marko Radosavljevic , Willy Rachmady , Gilbert Dewey , Jack Kavalieros
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include a modulation doped heterostructure, wherein the modulation doped heterostructure may comprise an active portion having a first bandgap and a delta doped portion having a second bandgap.
Public/Granted literature
- US20110140171A1 APPARATUS AND METHODS FOR FORMING A MODULATION DOPED NON-PLANAR TRANSISTOR Public/Granted day:2011-06-16
Information query
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