Invention Grant
- Patent Title: Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
- Patent Title (中): 具有结晶区域的氧化物半导体的半导体装置及其制造方法
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Application No.: US12938402Application Date: 2010-11-03
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Publication No.: US08633480B2Publication Date: 2014-01-21
- Inventor: Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
- Applicant: Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-255315 20091106
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
Public/Granted literature
- US20110108837A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-05-12
Information query
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