Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13411315Application Date: 2012-03-02
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Publication No.: US08633489B2Publication Date: 2014-01-21
- Inventor: In-young Jung , Choong-youl Im
- Applicant: In-young Jung , Choong-youl Im
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2007-0028164 20070322
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
Disclosed are a semiconductor device, which forms two insulation layers having different patterns by one mask process, and a method of manufacturing the same. In a semiconductor device having double insulation layers, a photosensitive material is included in an upper insulation layer. During a manufacture of the semiconductor device, the photosensitive material is used as a photo resist layer in order to reduce the number of masks.
Public/Granted literature
- US20120161118A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-06-28
Information query
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