Invention Grant
- Patent Title: Nitride semiconductor light-emitting device and method of manufacturing the same
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US11707926Application Date: 2007-02-20
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Publication No.: US08633495B2Publication Date: 2014-01-21
- Inventor: Hee-Jin Kim
- Applicant: Hee-Jin Kim
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2006-0016472 20060220
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00
Abstract:
There is provided a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a first nitride semiconductor layer including amorphous powder, an active layer on the first nitride semiconductor layer, and a second nitride semiconductor layer on the active layer.
Public/Granted literature
- US20070194329A1 Nitride semiconductor light-emitting device and method of manufacturing the same Public/Granted day:2007-08-23
Information query
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