Invention Grant
- Patent Title: Self-bootstrapping field effect diode structures and methods
- Patent Title (中): 自引导场效应二极管结构及方法
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Application No.: US12683425Application Date: 2010-01-06
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Publication No.: US08633521B2Publication Date: 2014-01-21
- Inventor: Alexei Ankoudinov , Vladimir Rodov
- Applicant: Alexei Ankoudinov , Vladimir Rodov
- Applicant Address: CH Geneva
- Assignee: STMicroelectronics N.V.
- Current Assignee: STMicroelectronics N.V.
- Current Assignee Address: CH Geneva
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.
Public/Granted literature
- US20100271851A1 SELF-BOOTSTRAPPING FIELD EFFECT DIODE STRUCTURES AND METHODS Public/Granted day:2010-10-28
Information query
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