Invention Grant
US08633528B2 Methods and apparatus for increasing memory density using diode layer sharing
有权
使用二极管层共享增加存储密度的方法和装置
- Patent Title: Methods and apparatus for increasing memory density using diode layer sharing
- Patent Title (中): 使用二极管层共享增加存储密度的方法和装置
-
Application No.: US13674513Application Date: 2012-11-12
-
Publication No.: US08633528B2Publication Date: 2014-01-21
- Inventor: Huiwen Xu , Er-Xuan Ping , Roy E. Scheuerlein
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film thereon. Numerous other aspects are also disclosed.
Public/Granted literature
- US20130313503A1 METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING Public/Granted day:2013-11-28
Information query
IPC分类:
