Invention Grant
- Patent Title: Semicondutor isolation structure
- Patent Title (中): 半导体隔离结构
-
Application No.: US13310145Application Date: 2011-12-02
-
Publication No.: US08633564B2Publication Date: 2014-01-21
- Inventor: Kamal Karda , Chandra Mouli
- Applicant: Kamal Karda , Chandra Mouli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical semiconductor devices are described.
Public/Granted literature
- US20130140631A1 SEMICONDUTOR ISOLATION STRUCTURE AND METHOD OF MANUFACTURE Public/Granted day:2013-06-06
Information query
IPC分类:
