Invention Grant
US08633567B2 Devices including a P-I-N diode disposed adjacent a silicide in series with a dielectric material
有权
包括与电介质材料串联的邻近硅化物的P-I-N二极管的器件
- Patent Title: Devices including a P-I-N diode disposed adjacent a silicide in series with a dielectric material
- Patent Title (中): 包括与电介质材料串联的邻近硅化物的P-I-N二极管的器件
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Application No.: US13705227Application Date: 2012-12-05
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Publication No.: US08633567B2Publication Date: 2014-01-21
- Inventor: Scott Brad Herner
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A device is provided that includes a vertically oriented p-i-n diode that includes semiconductor material, a silicide, germanide, or silicide-germanide layer disposed adjacent the vertically oriented p-i-n diode, and a dielectric material arranged electrically in series with the vertically oriented p-i-n diode. The dielectric material is disposed between a first conductive layer and a second conductive layer, and is selected from the group consisting of HfO2, Al2O3, ZrO2, TiO2, La2O3, Ta2O5, RuO2, ZrSiOx, AlSiOx, HfSiOx, HfAlOx, HfSiON, ZrSiAlOx, HfSiAlOx, HfSiAlON, and ZrSiAlON. Numerous other aspects are provided.
Public/Granted literature
- US20130119510A1 DEVICES INCLUDING A P-I-N DIODE DISPOSED ADJACENT A SILICIDE IN SERIES WITH A DIELECTRIC MATERIAL Public/Granted day:2013-05-16
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