Invention Grant
- Patent Title: Strained semiconductor materials, devices and methods therefore
- Patent Title (中): 因此，应变半导体材料，器件和方法
-
Application No.: US12706112Application Date: 2010-02-16
-
Publication No.: US08633573B2Publication Date: 2014-01-21
- Inventor: Jinendra Raja Jain , Roger T. Howe
- Applicant: Jinendra Raja Jain , Roger T. Howe
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: Kaplan Breyer Schwarz & Ottesen, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
Various applications are directed to a material stack having a strained active material therein. In connection with an embodiment, an active material (e.g. a semiconductor material) is at least initially and partially released from and suspended over a substrate, strained, and held in place. The release and suspension facilitates the application of strain to the semiconductor material.
Public/Granted literature
- US20100207254A1 Strained semiconductor materials, devices and methods therefore Public/Granted day:2010-08-19
Information query
IPC分类:
