Invention Grant
- Patent Title: Semiconductor device, and method and apparatus for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法和装置
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Application No.: US13421126Application Date: 2012-03-15
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Publication No.: US08633602B2Publication Date: 2014-01-21
- Inventor: Nobuhito Suzuya , Atsushi Yoshimura , Hideko Mukaida
- Applicant: Nobuhito Suzuya , Atsushi Yoshimura , Hideko Mukaida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-140847 20110624
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/29

Abstract:
According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: stacking and adhering a second semiconductor chip on a first semiconductor chip via an adhesive layer; adjusting at least one of an elasticity modulus of the adhesive layer, a sink amount of the adhesive layer, a thickness of a protective film at a surface of the first chip, and an elasticity modulus of the protective film such that “y” in a following formula is 70 or less; and sealing the chips by a molding resin with filler particles. y=74.7−82.7a1+273.2a2−9882a3+65.8a4 a1: a logarithm of the modulus of elasticity [MPa] of the adhesive layer a2: the sink amount [mm] of the adhesive layer a3: the thickness [mm] of the protective film a4: a logarithm of the modulus of elasticity [MPa] of the protective film.
Public/Granted literature
- US20120326339A1 SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME Public/Granted day:2012-12-27
Information query
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