Invention Grant
- Patent Title: Semiconductor device and radio communication device
- Patent Title (中): 半导体器件和无线电通信设备
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Application No.: US13651731Application Date: 2012-10-15
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Publication No.: US08633618B2Publication Date: 2014-01-21
- Inventor: Masanori Iijima , Yoshiaki Harasawa
- Applicant: Masanori Iijima , Yoshiaki Harasawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2009-221935 20090928
- Main IPC: H02M3/06
- IPC: H02M3/06

Abstract:
To provide a fast charge means for a capacitor in a negative bias generation circuit. A capacitor is present in a down converter in a negative bias generation circuit. In order to perform fast charge, the capacitance of the capacitor is reduced and a necessary amount of charge is minimized. On the other hand, an external capacitance provided separately from the capacitor in the down converter is coupled directly to a power supply voltage and charged. After the capacitor in the down converter is charged, the external capacitance and the capacitor in the down converter are coupled in parallel. Due to this, it is made possible to aim at both the increase in charge speed and the improvement of resistance to ripple noise.
Public/Granted literature
- US20130038505A1 SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE Public/Granted day:2013-02-14
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