Invention Grant
- Patent Title: Hall Effect sensor with reduced offset
- Patent Title (中): 霍尔效应传感器减少偏移
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Application No.: US12974239Application Date: 2010-12-21
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Publication No.: US08633687B2Publication Date: 2014-01-21
- Inventor: Chinwuba David Ezekwe
- Applicant: Chinwuba David Ezekwe
- Applicant Address: US DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: US DE Stuttgart
- Agency: Maginot, Moore & Beck
- Main IPC: G01R33/06
- IPC: G01R33/06

Abstract:
A Hall element sensor circuit in one embodiment includes a Hall element, a Hall element source, a switch matrix operatively connected to the Hall element and the Hall element source to establish a spinning current in the Hall element and to receive a Hall element signal from the Hall element based upon the spinning current, a front end amplifier including a first input operatively connected to a first switch matrix output and a second input operatively connected to a second switch matrix output, and at least one voltage source operatively connected to the front end amplifier at a location in the Hall element sensor circuit between the switch matrix and the front end amplifier.
Public/Granted literature
- US20120153945A1 Hall Effect Sensor with Reduced Offset Public/Granted day:2012-06-21
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