Invention Grant
- Patent Title: Semiconductor device evaluation apparatus and semiconductor device evaluation method
- Patent Title (中): 半导体装置评估装置及半导体装置的评价方法
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Application No.: US13351851Application Date: 2012-01-17
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Publication No.: US08633726B2Publication Date: 2014-01-21
- Inventor: Risho Koh , Takahiro Iizuka
- Applicant: Risho Koh , Takahiro Iizuka
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2011-012290 20110124
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
A semiconductor device evaluation apparatus includes a current measurement portion that measures a current value at multiple times included in a period from the beginning of application of a voltage to a semiconductor device to a steady state of the current value flowing through the semiconductor device; a period division portion that divides the period into a first period and a second period later than the first period and finds a curve approximately representing a temporal change in a current value measured at time included in the second period so that a difference between a current value measured at the time included in the first period and a current value found by extrapolating the curve at the same time becomes greater than a specified threshold value; and a current estimation portion that estimates a current value flowing through the semiconductor device at the start time.
Public/Granted literature
- US20120187975A1 SEMICONDUCTOR DEVICE EVALUATION APPARATUS AND SEMICONDUCTOR DEVICE EVALUATION METHOD Public/Granted day:2012-07-26
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