Invention Grant
- Patent Title: Variable attenuator having stacked transistors
- Patent Title (中): 具有堆叠晶体管的可变衰减器
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Application No.: US13549018Application Date: 2012-07-13
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Publication No.: US08633754B2Publication Date: 2014-01-21
- Inventor: Marcus Granger-Jones , Brad Nelson , Ed Franzwa
- Applicant: Marcus Granger-Jones , Brad Nelson , Ed Franzwa
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
In one embodiment, a variable attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. In this manner, the control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the variable attenuation level of the variable attenuator.
Public/Granted literature
- US20120280738A1 VARIABLE ATTENUATOR HAVING STACKED TRANSISTORS Public/Granted day:2012-11-08
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