Invention Grant
- Patent Title: Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry
- Patent Title (中): 具有用于激活和去激活静电放电防止电路的结构的磁阻传感器
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Application No.: US13433192Application Date: 2012-03-28
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Publication No.: US08634168B2Publication Date: 2014-01-21
- Inventor: Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
- Applicant: Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127

Abstract:
A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
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