Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13354183Application Date: 2012-01-19
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Publication No.: US08634170B2Publication Date: 2014-01-21
- Inventor: Takayasu Ito , Mitsuru Hiraki , Koichi Ashiga
- Applicant: Takayasu Ito , Mitsuru Hiraki , Koichi Ashiga
- Applicant Address: JP Kawasaki-shi JP Chiba
- Assignee: Renesas Electronics Corporation,Hitachi Device Engineering Co., Ltd.
- Current Assignee: Renesas Electronics Corporation,Hitachi Device Engineering Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi JP Chiba
- Agency: Miles & Stockbridge P.C.
- Priority: JP2000-192643 20000622; JP2001-128676 20010426
- Main IPC: H02H7/00
- IPC: H02H7/00 ; H02H9/00

Abstract:
An integrated circuit formed on a semiconductor chip includes voltage regulators for stepping down an externally-supplied power voltage to produce an internal power voltage, and internal circuits which operate based on the internal power voltage. The voltage regulators are laid in the area of the buffers and protective elements for the input/output signals and power voltages so that the overhead area due to the on-chip provision of the voltage regulators is minimized. The internal power voltage is distributed to the internal circuits through a looped main power line, with an electrode pad for connecting an external capacitor for stabilizing the internal power voltage being provided on it, so that the internal power voltage is stabilized and the power consumption of the integrated circuit is minimized.
Public/Granted literature
- US20120113552A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2012-05-10
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