Invention Grant
- Patent Title: Control circuit of read operation for semiconductor memory apparatus
- Patent Title (中): 半导体存储装置读操作的控制电路
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Application No.: US13276480Application Date: 2011-10-19
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Publication No.: US08634245B2Publication Date: 2014-01-21
- Inventor: Kwi Dong Kim
- Applicant: Kwi Dong Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0077692 20080808
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A control circuit for a read operation of a SERDES (SERializer and DESeriallizer) type semiconductor memory apparatus is disclosed that includes a first line driver configured to output a portion of a output signals from sense amplifier according to a first delay signal; a second line driver configured to output a rest of the output signals from the sense amplifier according to a second delay signal; and a first delay unit configured to output a second delay signal synchronized with a clock to the second line driver.
Public/Granted literature
- US20120033511A1 CONTROL CIRCUIT OF READ OPERATION FOR SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2012-02-09
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