Invention Grant
US08634257B2 Semiconductor storage device with memory cell utilized as a set-dedicated memory cell
有权
具有用作集合专用存储单元的存储器单元的半导体存储器件
- Patent Title: Semiconductor storage device with memory cell utilized as a set-dedicated memory cell
- Patent Title (中): 具有用作集合专用存储单元的存储器单元的半导体存储器件
-
Application No.: US13466866Application Date: 2012-05-08
-
Publication No.: US08634257B2Publication Date: 2014-01-21
- Inventor: Satoru Hanzawa , Hiroyuki Minemura
- Applicant: Satoru Hanzawa , Hiroyuki Minemura
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-105113 20110510
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.
Public/Granted literature
- US20120287697A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-11-15
Information query
