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US08634261B2 Semiconductor memory device and method of operating the same 有权
半导体存储器件及其操作方法

  • Patent Title: Semiconductor memory device and method of operating the same
  • Patent Title (中): 半导体存储器件及其操作方法
  • Application No.: US13225651
    Application Date: 2011-09-06
  • Publication No.: US08634261B2
    Publication Date: 2014-01-21
  • Inventor: Min Su Kim
  • Applicant: Min Su Kim
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Associates Patent Ltd.
  • Priority: KR10-2010-0087049 20100906; KR10-2011-0075119 20110728
  • Main IPC: G11C29/00
  • IPC: G11C29/00
Semiconductor memory device and method of operating the same
Abstract:
A semiconductor memory device includes an address controller for storing fail column addresses and sequentially outputting the fail column addresses while a first control signal is activated and a control logic for performing control so that data indicating a program pass is inputted to each of main page buffers associated with the respective fail column addresses outputted from the address controller while the first control signal is activated.
Abstract(Chinese):

一种半导体存储器件包括一个地址控制器，用于存储故障列地址，并且在第一控制信号被激活时顺序地输出故障列地址，以及用于执行控制的控制逻辑，使得指示程序通过的数据被输入到每个主页缓冲器 在第一控制信号被激活时，从地址控制器输出的各个故障列地址。

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