Invention Grant
US08634262B2 Word line driving signal control circuit, semiconductor memory apparatus having the same, and word line driving method 失效
字线驱动信号控制电路,具有相同的半导体存储装置和字线驱动方法

  • Patent Title: Word line driving signal control circuit, semiconductor memory apparatus having the same, and word line driving method
  • Patent Title (中): 字线驱动信号控制电路,具有相同的半导体存储装置和字线驱动方法
  • Application No.: US13337452
    Application Date: 2011-12-27
  • Publication No.: US08634262B2
    Publication Date: 2014-01-21
  • Inventor: In Pyo Lee
  • Applicant: In Pyo Lee
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Associates Patent Ltd.
  • Priority: KR10-2011-0054468 20110607
  • Main IPC: G11C29/00
  • IPC: G11C29/00 G11C17/18 G11C8/00
Word line driving signal control circuit, semiconductor memory apparatus having the same, and word line driving method
Abstract:
A word line driving signal control circuit of a semiconductor memory apparatus provided with a sub-redundancy cell array includes a fuse unit configured to generate a redundancy enable signal in response to a bank active signal and an address signal, and a repair determination unit configured to activate one of a normal word line driving signal, a redundancy word line driving signal, and a sub-redundancy word line driving signal in response to the bank active signal and the redundancy enable signal.
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