Invention Grant
US08634262B2 Word line driving signal control circuit, semiconductor memory apparatus having the same, and word line driving method
失效
字线驱动信号控制电路,具有相同的半导体存储装置和字线驱动方法
- Patent Title: Word line driving signal control circuit, semiconductor memory apparatus having the same, and word line driving method
- Patent Title (中): 字线驱动信号控制电路,具有相同的半导体存储装置和字线驱动方法
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Application No.: US13337452Application Date: 2011-12-27
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Publication No.: US08634262B2Publication Date: 2014-01-21
- Inventor: In Pyo Lee
- Applicant: In Pyo Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0054468 20110607
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C17/18 ; G11C8/00

Abstract:
A word line driving signal control circuit of a semiconductor memory apparatus provided with a sub-redundancy cell array includes a fuse unit configured to generate a redundancy enable signal in response to a bank active signal and an address signal, and a repair determination unit configured to activate one of a normal word line driving signal, a redundancy word line driving signal, and a sub-redundancy word line driving signal in response to the bank active signal and the redundancy enable signal.
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