Invention Grant
- Patent Title: Laser diode and method of manufacturing the same
- Patent Title (中): 激光二极管及其制造方法
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Application No.: US12591782Application Date: 2009-12-01
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Publication No.: US08634443B2Publication Date: 2014-01-21
- Inventor: Toshiaki Igarashi
- Applicant: Toshiaki Igarashi
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2008-310670 20081205
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A laser diode has a plurality of structures, each of which having a function of scattering, absorbing or reflecting stray light, disposed in a region along an optical waveguide, wherein at least one of said structures is formed in each divided region obtained by equally dividing said region along said optical waveguide into three or more parts in the longitudinal direction of said optical waveguide.
Public/Granted literature
- US20100085998A1 Laser diode and method of manufacturing the same Public/Granted day:2010-04-08
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