Invention Grant
- Patent Title: Artificial stone and manufacturing method thereof
- Patent Title (中): 人造石及其制造方法
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Application No.: US13979313Application Date: 2012-01-11
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Publication No.: US08636842B2Publication Date: 2014-01-28
- Inventor: Chang Hwan Park
- Applicant: Chang Hwan Park
- Applicant Address: KR Seoul
- Assignee: LG Hausys, Ltd.
- Current Assignee: LG Hausys, Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge, LLP
- Priority: KR10-2011-0003410 20110113
- International Application: PCT/KR2012/000273 WO 20120111
- International Announcement: WO2012/096511 WO 20120719
- Main IPC: C04B14/06
- IPC: C04B14/06 ; C04B18/06 ; B28B1/087

Abstract:
Disclosed is a method of manufacturing an artificial stone, and the method includes forming an artificial-stone paste which comprises 20-20 parts by weight of silica stone, metakaolim or silica fume, 200-300 parts by weight of quartz chips, 30-36 parts by weight if water, 1.5-3 part by weight of water-reducing agent and 0.2-3 parts by weight of pigment with response to 100 parts by weight of white cement; injecting the artificial-stone paste in a mold; primarily vacuum-molding the artificial-stone paste injected in the mold; secondarily vibration-molding the primarily molded artificial-stone paste; primarily curing the secondarily molded artificial-stone paste; secondarily curing the primarily cured artificial-stone paste, which induces a hydrothermal reaction and thus causes a pozzolanic reaction; releasing the secondarily cured artificial-stone paste from the mold; and surface-machining the released artificial-stone paste.
Public/Granted literature
- US20130284072A1 ARTIFICIAL STONE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-10-31
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