Invention Grant
- Patent Title: Plasma processing apparatus and structure therein
- Patent Title (中): 等离子体处理装置及其结构
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Application No.: US12046723Application Date: 2008-03-12
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Publication No.: US08636873B2Publication Date: 2014-01-28
- Inventor: Masakazu Higuma , Shinji Muto
- Applicant: Masakazu Higuma , Shinji Muto
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2007-070370 20070319
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00

Abstract:
A structure, for use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate, includes a base member at least having a first surface and a second surface; and a thermally sprayed insulating film covering the first surface. Further, the structure includes an insulating protection member covering the second surface and made of a material having a linear expansion coefficient different from that of the base member; and an insulating layer interposed between the thermally sprayed insulating film and the insulating protection member to prevent a contact therebetween. The thermally sprayed insulating film, the insulating protection member and the insulating layer constitute an insulating surface covering the first surface and the second surface.
Public/Granted literature
- US20080230181A1 PLASMA PROCESSING APPARATUS AND STRUCTURE THEREIN Public/Granted day:2008-09-25
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