Invention Grant
US08636873B2 Plasma processing apparatus and structure therein 有权
等离子体处理装置及其结构

Plasma processing apparatus and structure therein
Abstract:
A structure, for use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate, includes a base member at least having a first surface and a second surface; and a thermally sprayed insulating film covering the first surface. Further, the structure includes an insulating protection member covering the second surface and made of a material having a linear expansion coefficient different from that of the base member; and an insulating layer interposed between the thermally sprayed insulating film and the insulating protection member to prevent a contact therebetween. The thermally sprayed insulating film, the insulating protection member and the insulating layer constitute an insulating surface covering the first surface and the second surface.
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