Invention Grant
- Patent Title: Producing method of semiconductor device and substrate processing apparatus
- Patent Title (中): 半导体器件和衬底处理设备的生产方法
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Application No.: US12404915Application Date: 2009-03-16
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Publication No.: US08636882B2Publication Date: 2014-01-28
- Inventor: Kenichi Suzaki , Jie Wang
- Applicant: Kenichi Suzaki , Jie Wang
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2003-327358 20030919
- Main IPC: H05B3/60
- IPC: H05B3/60 ; C23C16/46 ; H05B6/10
Abstract:
Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
Public/Granted literature
- US20090239386A1 PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2009-09-24
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