Invention Grant
- Patent Title: Gas sensor element and method of manufacturing the same
- Patent Title (中): 气体传感器元件及其制造方法
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Application No.: US13071916Application Date: 2011-03-25
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Publication No.: US08636886B2Publication Date: 2014-01-28
- Inventor: Atsushi Watanabe
- Applicant: Atsushi Watanabe
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2010-080374 20100331
- Main IPC: G01N27/407
- IPC: G01N27/407

Abstract:
A gas sensor element includes a base member comprising a plurality of laminated solid electrolyte layers, and having a space that communicates with the outside of the gas sensor element and allows introduction of the gas to be measured into the gas sensor element, and a porous measurement electrode that is formed on a surface of the space inside the base member, and is covered with a porous measurement electrode protective layer, wherein an average pore size A of the measurement electrode and an average pore size B of the measurement electrode protective layer satisfy the relationship “0.05≦B/A≦0.9”, the measurement electrode has an average pore size of 0.5 to 15 μm, and the measurement electrode protective layer has an average pore size of 0.05 to 9 μm, a porosity of 5 to 50%, and a thickness of 10 to 200 μm.
Public/Granted literature
- US20110240469A1 GAS SENSOR ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-10-06
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