Invention Grant
- Patent Title: Non-uniform semiconductor device active area pattern formation
- Patent Title (中): 非均匀半导体器件有源区域图案形成
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Application No.: US12856343Application Date: 2010-08-13
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Publication No.: US08637135B2Publication Date: 2014-01-28
- Inventor: Tsung-Lin Lee , Shao-Ming Yu
- Applicant: Tsung-Lin Lee , Shao-Ming Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G03B21/62
- IPC: G03B21/62
Abstract:
In accordance with an embodiment, a semiconductor device comprises at least three active areas. The at least three active areas are proximate. Longitudinal axes of the at least three active areas are parallel, and each of the at least three active areas comprises an edge intersecting the longitudinal axis of the respective active area. The edges of the at least three active areas form an arc.
Public/Granted literature
- US20110115024A1 Non-Uniform Semiconductor Device Active Area Pattern Formation Public/Granted day:2011-05-19
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