Invention Grant
US08637222B2 Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern
有权
用于其的负抗蚀剂图案形成方法，显影剂和负极化学放大抗蚀剂组合物以及抗蚀剂图案
- Patent Title: Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern
- Patent Title (中): 用于其的负抗蚀剂图案形成方法，显影剂和负极化学放大抗蚀剂组合物以及抗蚀剂图案
-
Application No.: US13146976Application Date: 2010-01-29
-
Publication No.: US08637222B2Publication Date: 2014-01-28
- Inventor: Toru Tsuchihashi , Tadateru Yatsuo , Koji Shirakawa , Hideaki Tsubaki , Akira Asano
- Applicant: Toru Tsuchihashi , Tadateru Yatsuo , Koji Shirakawa , Hideaki Tsubaki , Akira Asano
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-020887 20090130; JP2009-038665 20090220; JP2009-088556 20090331
- International Application: PCT/JP2010/051652 WO 20100129
- International Announcement: WO2010/087516 WO 20100805
- Main IPC: G03C5/00
- IPC: G03C5/00
Abstract:
A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method.
Public/Granted literature
Information query
