Invention Grant
US08637229B2 Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
有权
图案形成方法，图案形成方法中使用的多次显影用抗蚀剂组合物，图案形成方法中使用的负显影用显影剂和图案形成方法中使用的负显影用冲洗液
- Patent Title: Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
- Patent Title (中): 图案形成方法，图案形成方法中使用的多次显影用抗蚀剂组合物，图案形成方法中使用的负显影用显影剂和图案形成方法中使用的负显影用冲洗液
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Application No.: US12871969Application Date: 2010-08-31
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Publication No.: US08637229B2Publication Date: 2014-01-28
- Inventor: Hideaki Tsubaki , Shinichi Kanna
- Applicant: Hideaki Tsubaki , Shinichi Kanna
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-347560 20061225; JP2007-103901 20070411; JP2007-117158 20070426; JP2007-325915 20071218
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/30 ; G03F7/32
Abstract:
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
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