Invention Grant
- Patent Title: Integrated circuit having doped semiconductor body and method
- Patent Title (中): 具有掺杂半导体器件的集成电路及方法
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Application No.: US13564158Application Date: 2012-08-01
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Publication No.: US08637328B2Publication Date: 2014-01-28
- Inventor: Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- Applicant: Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102006055885 20061127
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L29/36
Abstract:
An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
Public/Granted literature
- US20120313225A1 INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD Public/Granted day:2012-12-13
Information query
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