Invention Grant
- Patent Title: High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution
- Patent Title (中): 在低温水溶液中生长的多个表面上由氧化锌层覆盖的高亮度发光二极管
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Application No.: US12938948Application Date: 2010-11-03
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Publication No.: US08637334B2Publication Date: 2014-01-28
- Inventor: Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
- Applicant: Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
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