Invention Grant
- Patent Title: Phase change memory with threshold switch select device
- Patent Title (中): 具有阈值开关选择装置的相变存储器
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Application No.: US11272208Application Date: 2005-11-10
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Publication No.: US08637342B2Publication Date: 2014-01-28
- Inventor: Ilya V. Karpov , Sean Jong Lee , Yudong Kim , Gregory E. Atwood
- Applicant: Ilya V. Karpov , Sean Jong Lee , Yudong Kim , Gregory E. Atwood
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
Public/Granted literature
- US20070105267A1 Phase change memory with threshold switch select device Public/Granted day:2007-05-10
Information query
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